2SD730 transistor equivalent, npn transistor.
*Power switching
*Hammer drivers
*Series and shunt regulator
*General purpose amplifier amplifiers
ABSO.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= 12A
*Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
*Minimum Lot-to-Lot variations for robust device
perform.
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