2SD727 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier and power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SB691
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT.
Image gallery
TAGS
Download (Size : 201.71KB)