2SD673 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*High Power Dissipation-
: PC= 60W(Max)@TC=25℃
*Complement to Type 2SB653
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Image gallery
TAGS
Download (Size : 203.28KB)