2SD676 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
*High Power Dissipation-
: PC= 125W(Max)@TC=25℃
*Complement to Type 2SB656
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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