2SD665 transistor equivalent, npn transistor.
*Designed for power amplifier applications.
*Recommended for 200W high-fidelity audio frequency
amplifier output.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
*High Current Capability
*Excellent Safe Operating Area
*Complement to Type 2SB645
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP.
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