2SD582 transistor equivalent, npn transistor.
*Designed for 80~100W audio amplifier power output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 7A
*Complement to Type 2SB612
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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