2SD581 transistor equivalent, npn transistor.
*Designed for 40~60W audio amplifier power output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desig.
Image gallery
TAGS
Download (Size : 201.70KB)