2SD553 transistor equivalent, npn transistor.
*High current switching applications.
*Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V(Max) @IC= 4A
*Complement to Type 2SB553
*Minimum Lot-to-Lot variations for robust device
performance and reliable o.
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