2SD552 transistor equivalent, npn transistor.
*Power amplifier, power switching applications.
*DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM R.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V (Min)
*High Power Dissipation
*Complement to Type 2SB552
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power amplifier, pow.
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