2SD459 transistor equivalent, npn transistor.
*Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*High DC Current Gain
: hFE= 1500(Min) @IC= 5A
*Low Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*D.
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