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Inchange Semiconductor

2SD458 Datasheet Preview

2SD458 Datasheet

Silicon NPN Power Transistors

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD458
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Power Dissipation-
: PC= 80W(Max)@TC=25
APPLICATIONS
·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE= 50Ω
VCEO
Collector-Emitter Voltage
600 V
600
www.DataSheet.co.kr
V
400 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
2A
IBM Base Current-Peak
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
3A
80 W
150
-65~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/




Inchange Semiconductor

2SD458 Datasheet Preview

2SD458 Datasheet

Silicon NPN Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD458
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICER Collector Cutoff Current
VCE= 600V; RBE= 50Ω
hFE DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT
400 V
5V
1.5 V
3.0 V
1.0 mA
6.5 50
‹ hFE Classifications
QR
15-50
6.5-30
www.DataSheet.co.kr
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 2SD458
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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