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2SD458 - Silicon NPN Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Power Dissipation- : PC= 80W(Max)@TC=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplifier and switching applications.

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications.
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