2SD458 transistors equivalent, silicon npn power transistors.
*Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
*High Power Dissipation-
: PC= 80W(Max)@TC=25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high power ampl.
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