2SD338 transistor equivalent, npn transistor.
*Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
*Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 70V(Min)
*Excellent Safe Operating Area
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC = 5A
*Minimum Lot-to-Lot variations for robust device
performance and reli.
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