2SD325 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
*Recommended for 5 watts AF power amplifier output use.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 1.5A
*Complement to Type 2SB511
*Minimum Lot-to-Lot variations for robust device
performance and reliable.
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