2SD2557 transistor equivalent, npn transistor.
*Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*High DC Current Gain
: hFE= 1500(Min.)@ IC= 1A, VCE= 5V
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 200V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for seri.
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