Datasheet4U Logo Datasheet4U.com

2SD2551 - NPN Transistor

Description

High Breakdown Voltage- ：VCBO= 1700V (Min) High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for color TV horizontal deflection applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2551 Silicon NPN Transistor Toshiba Semiconductor
2SD2550 Silicon NPN Transistor Toshiba Semiconductor
2SD2553 NPN Transistor Toshiba Semiconductor
2SD2553 SILICON POWER TRANSISTOR SavantIC
2SD2553 SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR TGS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD2550 NPN Transistor
2SD2553 NPN Transistor
2SD2557 NPN Transistor
2SD2558 NPN Transistor
2SD2559 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current- Pulse 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2551 isc website：www.iscsemi.
Published: |