2SD2384 transistor equivalent, npn transistor.
*Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
*High DC Current Gain-
: hFE= 5000(Min)@IC= 6A
*Complement to Type 2SB1555
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS <.
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