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2SD2386
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2386
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 140 140 5 7 0.1
70
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.
2SD2386 Datasheet
