2SD2374 transistor equivalent, npn transistor.
*Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collecto.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Collector Power Dissipation-
: PC= 25 W@ TC= 25℃
*Low Collector Saturation Voltage-
: VCE(sat)= 1.2V(Max)@ (IC= 3A, IB= 0.375A)
*Complement to Type 2SB1548
*Minimum Lot-t.
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