2SD1988 transistor equivalent, npn transistor.
*Low-frequency amplifications.
*Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*High DC Current Gain-
: hFE = 3000(Min)@ IC= 1A
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
*Incorporating a built-in zener diode
*Minimum Lot-to-Lot variations for robust device
performance and reliable.
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