2SD1982 transistor equivalent, npn transistor.
*Switching regulator
*General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
*Low Collector Saturation Voltage
*High DC Current Gain
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLIC.
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