*Switching applications.
*Hammer drive, pulse motor drive applications.
*Power amplifier applications. ABSO.

*High DC Current Gain- : hFE = 1000(Min)@ IC= 2A
*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min)
*Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A
*Minimum Lot-to-Lot variations for robust device pe.

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