2SD1762 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min.)
*Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 2A
*Complement to Type 2SB1185
*Minimum Lot-to-Lot variations for robust device
performance and reliable operati.
Image gallery
TAGS
Download (Size : 209.92KB)