2SD1680 transistor equivalent, npn transistor.
*Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*Collector-Base Breakdown Voltage-
: V(BR)CBO= 330V(Min)
*High Power Dissipation
*High Speed Switching
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for horizontal defle.
Image gallery
TAGS
Download (Size : 204.88KB)