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2SD1683 - Bipolar Transistor

Features

  • Adoption of FBET, MBIT processes Large current capacity and wide ASO.
  • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C1 Conditions Ratings (--)60 (--)50 (-)6 (-)4 (-)6 1.5 0 150 -55 to +.

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Datasheet Details

Part number 2SD1683
Manufacturer onsemi
File Size 288.70 KB
Description Bipolar Transistor
Datasheet download datasheet 2SD1683 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor (–)50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • http://onsemi.com Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Large current capacity and wide ASO • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C1 Conditions Ratings (--)60 (--)50 (-)6 (-)4 (-)6 1.5 0 150 -55 to +150 Unit V V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
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