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2SD1638 - NPN Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 3 A 15 W 1.
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