2SD1592 transistor equivalent, npn transistor.
*High voltage and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
*High DC Current Gain
: hFE= 400(Min) @ IC= 2A, VCE= 2V
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 2A
*Minimum Lot-to-Lot variations for robu.
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