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2SD1591 - NPN Transistor

Description

Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 10A High DC Current Gain : hFE= 1000(Min) @ IC= 10A Complement to Type 2SB1100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power

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isc Silicon NPN Darlington Power Transistor 2SD1591 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 10A ·High DC Current Gain : hFE= 1000(Min) @ IC= 10A ·Complement to Type 2SB1100 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.
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