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2SD1592 - NPN Transistor

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Part number 2SD1592
Manufacturer INCHANGE
File Size 189.63 KB
Description NPN Transistor
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage

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