2SD155 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 2A
*Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operatio.
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