2SD1535 transistor equivalent, npn transistor.
*Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
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*Collector-Base Breakdown Voltage-
: V(BR)CBO = 500V(Min.)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high power amplifier applications.
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