2SD1531 transistor equivalent, power transistor.
*Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
*Good Linearity of hFE
*Low Collector Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for AF .
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