2SD1515 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier and high
current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
*High DC Current Gain
: hFE= 1000(Min) @ IC= 10A, VCE= 3V
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATI.
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