2SD1510 transistor equivalent, npn transistor.
*Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Bas.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*High DC Current Gain
: hFE= 1000(Min) @ IC= 3A, VCE= 3V
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS.
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