2SD1437 transistor equivalent, npn transistor.
*Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V.
*Collector-Emitter Breakdown Voltage
:V(BR)CEO= 60V(Min)
*Complement to Type 2SB1033
*Low Collector Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for .
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