2SD1386 transistor equivalent, npn transistor.
*Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
*High DC Current Gain
: hFE= 2000(Min) @IC= 4A
*Low Saturation Voltage
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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