2SD1380 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High Collector Current -IC= 2A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 32V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
*Complement to Type 2SB1009
*Minimum Lot-to-Lot variations for robust device
performance.
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