2SD1376 transistor equivalent, npn transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
*Low Collector-Emitter Saturation Voltage
*Complement to Type 2SB1012
*Minimum Lot-to-Lot variations for robust device
pe.
Image gallery
TAGS
Download