Datasheet4U Logo Datasheet4U.com

2SD1375 - NPN Transistor

Description

High Collector-Base Voltage- : VCBO= 300V(Min.) Good Linearity of hFE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switc

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1375 SILICON POWER TRANSISTOR SavantIC
2SD1371 Silicon NPN Transistor Inchange Semiconductor
2SD1376 Silicon NPN Transistor Hitachi Semiconductor
2SD1376 SILICON POWER TRANSISTOR SavantIC
2SD1376K Silicon NPN Transistor Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1370 NPN Transistor
2SD1372 NPN Transistor
2SD1373 NPN Transistor
2SD1374 NPN Transistor
2SD1376 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1375 DESCRIPTION ·High Collector-Base Voltage- : VCBO= 300V(Min.) ·Good Linearity of hFE ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage,high-speed,power switching regulators and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.