2SD1263 transistor equivalent, npn transistor.
*Designed for power amplification applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V.
*Collector-Emitter Breakdown Voltage
: V(BR)CEO= 250V(Min)
*High Collector Power Dissipation
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for po.
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