| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter ... |
| Features |
X UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
0.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 1.5A; IB= 0.3A VCB= 500V; IE= 0
1.3
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
10 μA
hFE
DC Current G...
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| Datasheet |
 2SC5130 Datasheet - 169.07KB |
