2SC2489 transistor equivalent, silicon npn power transistor.
*Designed for AF amplifier,high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
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Good Linearity of hFE
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V (Min)
*Wide Area of Safe Operation
*Complement to Type 2SA1065
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT.
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