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2SC2333 Datasheet Preview

2SC2333 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
2SC2333
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 400V(Min)
·High Speed Switching
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator, DC-DC converter and
ultrasonic appliance applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
15
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC2333 Datasheet Preview

2SC2333 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC2333
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.5A; IB= 0.1A
1.2
V
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 400V ; IE= 0
VCE= 400V;VBE(off)=-5V
VCE= 400V;VBE(off)=-5V;Ta= 125
VEB= 5V; IC= 0
10 μA
10 μA
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
20
80
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
10
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A , RL= 300Ω,
IB1= -IB2= 0.1A,VCC150V
1.0 μs
2.5 μs
1.0 μs
hFE-1 Classifications
M
L
K
20-40 30-60 40-80
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SC2333
Description NPN Transistor
Maker INCHANGE
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2SC2333 Datasheet PDF






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