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isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1006 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3.0
A
Collector Power Dissipation@ Ta=25℃
1.
2SC2336 Datasheet
