2SB871 transistor equivalent, pnp transistor.
*Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -20V(Min)
*High Speed Switching
*Low Collector Saturation Voltage
: VCE(sat)= -0.6V(Max)@IC= -10A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP.
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