*Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min)
*High Power Dissipation
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for low.

2SB681

2SB682

2SB686

2SB688

2SB689

2SB600

2SB601

2SB604

2SB605

2SB608

2SB609

2SB611

2SB612

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts