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2SB686 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) Good Linearity of hFE Complement to Type 2SD716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 30~35W high-fidelity a

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isc Silicon PNP Power Transistor 2SB686 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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