*Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min)
*High DC Current Gain : hFE= 2000(Min) @IC= -1A
*Low Saturation Voltage
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
.

2SB668

2SB600

2SB601

2SB604

2SB605

2SB608

2SB609

2SB611

2SB612

2SB613

2SB616

2SB617

2SB617A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts