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2SB551 - PNP Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A High Power Dissipation- : PC= 25W(Max)@TC=55℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifier applications.

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isc Silicon PNP Power Transistors 2SB551 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation- : PC= 25W(Max)@TC=55℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature -3 A 25 W 150 ℃ Tstg Storage Temperature -45~150 ℃ isc website：www.iscsemi.
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