2SB1655 transistor equivalent, pnp transistor.
*Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collecto.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and .
Image gallery
TAGS
Download (Size : 202.31KB)