3.8±0.2
90° 0.65±0.1 0.85±0.1
2.5±0.1
1.0±0.1 0.7±0.1 0.7±0.1
0.8C
0.8C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
16.0±1.0
s Absolute Maximum Ratings
0.5±0.1 2.5±0.2 0.8C 2.5±0.2
0.4±0.1 2.05±0.2
1
2
3
1:Emitter 2:Collector 3:Base MT3 Type Package
s Electrical Characteristics
Parameter.
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Power Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
7.5±0.2
Unit: mm
4.5±0.2
q q q
High collector to emitter VCEO Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
Ratings –400 –400 –7 –1 – 0.5 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C
10.8±0.2
s Features
3.8±0.2
90° 0.65±0.1 0.85±0.1
2.5±0.1
1.0±0.1 0.7±0.1 0.7±0.1
0.8C
0.8C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
16.0±1.0
s Absolute Maximum Ratings
0.5±0.1 2.5±0.2 0.8C 2.5±0.2
0.4±0.1 2.05±0.
2SB1653 Datasheet
